New High Speed GaAs Memory Cell
نویسندگان
چکیده
This paper describes an experimental GaAs MESFET static memory cell which overcomes the principal disadvantages of the conventional cell implementation. Cell size is 36x37 μm2 at 0.6 μm gate length. An experimental 32 word x 32bit array has been designed. From simulation results, an address access time of 1ns has been obtained. The cell can be operated at the single supply voltage from 1V to 2V. Measured results show a total current consumption of 14 μA/cell when operated at 1V.
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